إنشاء منصة تجارية موثوق بها من المصنعين والموردين في جميع أنحاء العالم .
6 المنتجات
صور نموذج الأسعار الكمية جرد صانع وصف Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
IR3598MTR1PBF
عرض .
RFQ
3,776
بقعة
Infineon Technologies IC MOSFET DRVR N-CH DUAL 16QFN - Obsolete Tape & Reel (TR) Non-Inverting 0°C ~ 150°C (TJ) Surface Mount 16-VFQFN Exposed Pad 16-QFN (3x3) 4.5 V ~ 5.5 V Synchronous Half-Bridge 4 N-Channel MOSFET 0.7V, 1.3V - - 15ns, 12ns
IRS2001MPBF
عرض .
RFQ
2,533
بقعة
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16MLPQ - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 16-VFQFN Exposed Pad 16-MLPQ (4x4) 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 200V 70ns, 35ns
IR3598MTR1PBF
عرض .
RFQ
3,776
بقعة
Infineon Technologies IC MOSFET DRVR N-CH DUAL 16QFN - Obsolete Tape & Reel (TR) Non-Inverting 0°C ~ 150°C (TJ) Surface Mount 16-VFQFN Exposed Pad 16-QFN (3x3) 4.5 V ~ 5.5 V Synchronous Half-Bridge 4 N-Channel MOSFET 0.7V, 1.3V - - 15ns, 12ns
IRS2001MPBF
عرض .
RFQ
2,533
بقعة
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16MLPQ - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 16-VFQFN Exposed Pad 16-MLPQ (4x4) 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 200V 70ns, 35ns
IR3598MTR1PBF
عرض .
RFQ
3,776
بقعة
Infineon Technologies IC MOSFET DRVR N-CH DUAL 16QFN - Obsolete Tape & Reel (TR) Non-Inverting 0°C ~ 150°C (TJ) Surface Mount 16-VFQFN Exposed Pad 16-QFN (3x3) 4.5 V ~ 5.5 V Synchronous Half-Bridge 4 N-Channel MOSFET 0.7V, 1.3V - - 15ns, 12ns
IRS2001MPBF
عرض .
RFQ
2,533
بقعة
Infineon Technologies IC DRIVER HIGH/LOW SIDE 16MLPQ - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 16-VFQFN Exposed Pad 16-MLPQ (4x4) 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 200V 70ns, 35ns