- Packaging :
- Input Type :
12 المنتجات
| صور | نموذج | الأسعار | الكمية | جرد | صانع | وصف | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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عرض . |
2,174
بقعة
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Microchip Technology | IC MOSFET DVR 9A HS N-INV 8-SOIJ | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
3,981
بقعة
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Microchip Technology | IC MOSFET DVR 9A HS N-INV 8-SOIJ | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
1,697
بقعة
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Microchip Technology | IC MOSFET DVR 9A HS INV 8-SOIJ | - | Active | Tape & Reel (TR) | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
1,632
بقعة
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Microchip Technology | IC MOSFET DVR 9A HS INV 8-SOIJ | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
2,174
بقعة
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Microchip Technology | IC MOSFET DVR 9A HS N-INV 8-SOIJ | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
3,981
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS N-INV 8-SOIJ | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
1,697
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS INV 8-SOIJ | - | Active | Tape & Reel (TR) | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
1,632
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS INV 8-SOIJ | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
2,174
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS N-INV 8-SOIJ | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
3,981
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS N-INV 8-SOIJ | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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عرض . |
1,697
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS INV 8-SOIJ | - | Active | Tape & Reel (TR) | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns | ||
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|
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عرض . |
1,632
بقعة
|
Microchip Technology | IC MOSFET DVR 9A HS INV 8-SOIJ | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ | 4.5 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 9A, 9A | 60ns, 60ns |
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